2STA1962 - STMicroelectronics

STMICROELECTRONICS 2STA1962Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 130 W, 8 A, 80

Technical Details

China RoHS Compliant
Collector Base Voltage (VCBO) 230V
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage 3V
Collector Emitter Voltage (VCEO) 230V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 30MHz
Gain Bandwidth Product 30MHz
Height 18.7mm
hFE Min 35
Introduction Date 2007-09-28
Lead Free Lead Free
Length 15.8mm
Lifecycle Status Obsolete
Max Breakdown Voltage 230V
Max Collector Current 15A
Max Frequency 30MHz
Max Operating Temperature 150°C
Max Power Dissipation 130W
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity PNP
Power Dissipation 130W
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Transition Frequency 30MHz
Width 5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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