2STC5200 - STMicroelectronics

High power NPN epitaxial planar bipolar transistor

Technical Details

Case/Package TO-264
China RoHS Compliant
Collector Base Voltage (VCBO) 230V
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage 3V
Collector Emitter Voltage (VCEO) 230V
Contact Plating Tin
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 30MHz
Gain Bandwidth Product 30MHz
Height 26.4mm
hFE Min 35
Introduction Date 2007-06-19
Lead Free Lead Free
Length 20.2mm
Lifecycle Status Obsolete
Max Collector Current 15A
Max Frequency 30MHz
Max Operating Temperature 150°C
Max Power Dissipation 150W
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 150W
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Transition Frequency 30MHz
Width 5.2mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

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Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
STMicroelectronics Obsolete
Toshiba Obsolete
onsemi Production
onsemi Production
onsemi Production
onsemi Production
STMicroelectronics Obsolete
onsemi Production
onsemi Obsolete
onsemi Obsolete

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