BD442 - STMicroelectronics
Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 500mA 1V 100muA 36W 3MHz
Technical Details
| Case/Package | SOT-32 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Contact Plating | Tin |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Height | 10.8mm |
| hFE Min | 15 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1980-01-04 |
| Length | 7.8mm |
| Lifecycle Status | Obsolete |
| Max Collector Current | 4A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 36W |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Transition Frequency | 3MHz |
| Width | 2.7mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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