Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Voltage (VCEO) 100V
Contact Plating Tin
Continuous Collector Current 10A
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Height 9.15mm
hFE Min 750
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1989-06-01
Length 10.4mm
Lifecycle Status Production
Max Collector Current 10A
Max Operating Temperature 150°C
Max Power Dissipation 70W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity PNP
Power Dissipation 70W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Transition Frequency 3MHz
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics BDX34C | Farnell

Farnell

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi Obsolete
onsemi Obsolete
Bourns Obsolete
Bourns Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
STMicroelectronics Obsolete
onsemi Obsolete

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