Discrete Semiconductors > Transistors > BJTs

BDX54C - STMicroelectronics

Transistor: PNP; bipolar; -100V; -8A; 60W; -65+150 deg.C; THT; TO220

Technical Details

Case/Package	TO-220
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	100V
Collector Emitter Saturation Voltage	2V
Collector Emitter Voltage (VCEO)	100V
Contact Plating	Tin
Continuous Collector Current	8A
Current Rating	-8A
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Height	9.15mm
hFE Min	750
Lead Free	Lead Free
Length	10.4mm
Lifecycle Status	Production
Max Collector Current	8A
Max Operating Temperature	150°C
Max Power Dissipation	60W
Min Operating Temperature	-65°C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Polarity	PNP
Power Dissipation	60W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Transition Frequency	20MHz
Voltage Rating (DC)	-100V
Width	4.6mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

STMicroelectronics BDX54C | RS

RS

Datasheets

Future Electronics

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	BDX54C	Obsolete
onsemi	BDX54CG	Obsolete
Bourns	BDX54C	Obsolete
onsemi	BDX54CTU	Obsolete
onsemi	BDX54BTU	Obsolete
onsemi	BDX54B	Obsolete
onsemi	BDX34B	Obsolete
STMicroelectronics	BDX54F	Obsolete
onsemi	2N6042	Obsolete
onsemi	BDX34C	Obsolete

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