BZW06-33B - STMicroelectronics

Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-15

Technical Details

Breakdown Voltage 39V
Capacitance 900pF
Case/Package DO-15
China RoHS Non-Compliant
Clamping Voltage 69.7V
Composition Zener
Contact Plating Tin
Country of Origin Mainland China
Diameter 3.53mm
Direction Bidirectional
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
ESD Protection No
Height 3.53mm
Harmonized Tariff Schedule (HTS) Code 8541.10.00.50
Introduction Date 1980-01-04
Lead Free Lead Free
Leakage Current 1µA
Length 6.75mm
Lifecycle Status Obsolete
Max Breakdown Voltage 37.1V
Max Junction Temperature (Tj) 175°C
Max Operating Temperature 175°C
Max Power Dissipation 1.7W
Max Repetitive Reverse Voltage (Vrrm) 33V
Max Reverse Leakage Current 1µA
Max Surge Current 11.1A
Min Breakdown Voltage 37.1V
Min Operating Temperature -55°C
Mount Through Hole
Number of Bidirectional Channels 1
Number of Elements 1
Number of Pins 2
Number of Terminals 2
Operating Supply Voltage 33.3V
Packaging Cut Tape
Peak Pulse Current 57A
Peak Pulse Power 600W
Peak Reverse Current 5µA
Polarity Bidirectional
Power Dissipation 1.7W
Power Line Protection No
Power Rating 600W
Radiation Hardening No
REACH SVHC No
Reverse Breakdown Voltage 37.1V
Reverse Standoff Voltage 33V
RoHS Compliant
Schedule B 8541100080
Test Current 1mA
Voltage Rating (DC) 33V
Width 3.53mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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STMicroelectronics BZW06-33B | RS

RS

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
STMicroelectronics Obsolete
Diotec Production
Taiwan Semiconductor Production
Vishay Obsolete
Littelfuse Obsolete
Vishay Production
Taiwan Semiconductor Obsolete
Semtech Production
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STMicroelectronics Obsolete

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