BZW50-68B - STMicroelectronics

Diode TVS Single Bi-Dir 68V 5KW 2-Pin Case R-6 T/R

Technical Details

Breakdown Voltage 84V
Capacitance 3nF
Case/Package R
China RoHS Non-Compliant
Clamping Voltage 157V
Composition Zener
Contact Plating Tin
Country of Origin Mainland China
Diameter 9.1mm
Direction Bidirectional
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
ESD Protection No
Harmonized Tariff Schedule (HTS) Code 8541.10.00.50
Introduction Date 1980-01-04
Lead Free Lead Free
Leakage Current 5µA
Length 9.1mm
Lifecycle Status Obsolete
Max Breakdown Voltage 75.6V
Max Junction Temperature (Tj) 175°C
Max Operating Temperature 175°C
Max Power Dissipation 6.5W
Max Repetitive Reverse Voltage (Vrrm) 68V
Max Reverse Leakage Current 5µA
Max Surge Current 382A
Min Breakdown Voltage 75.6V
Min Operating Temperature -55°C
Mount Through Hole
Number of Bidirectional Channels 1
Number of Channels 1
Number of Elements 1
Number of Pins 2
Number of Terminals 2
Operating Supply Voltage 68V
Peak Pulse Current 382A
Peak Pulse Power 5kW
Peak Reverse Current 5µA
Polarity Bidirectional
Power Dissipation 6.5W
Power Line Protection No
Power Rating 5kW
Radiation Hardening No
REACH SVHC No
Reverse Breakdown Voltage 75.6V
Reverse Standoff Voltage 68V
RoHS Compliant
Termination Axial
Test Current 1mA
Voltage Rating (DC) 68V
Weight 2.047998g

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics BZW50-68B | TME

TME

Lifecycle Status Indicator

   Obsolete

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