STFI260N6F6 - STMicroelectronics

N-channel 60 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAKFP package

Technical Details

Case/Package TO-262-3
China RoHS Compliant
Continuous Drain Current (ID) 80A
Drain to Source Resistance 3mΩ
Drain to Source Voltage (Vdss) 60V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 62.6ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 11.4nF
Introduction Date 2012-04-13
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 41.7W
Min Operating Temperature -55°C
Mount Through Hole
Number of Channels 1
Number of Elements 1
Number of Pins 3
Radiation Hardening No
Rds On Max 3mΩ
REACH SVHC Yes
Rise Time 165ns
RoHS Compliant
Turn-Off Delay Time 144.4ns
Turn-On Delay Time 31.4ns
Weight 2.240009g

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
STMicroelectronics Obsolete
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STMicroelectronics Obsolete
STMicroelectronics Obsolete
STMicroelectronics Obsolete
STMicroelectronics Obsolete
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