STFI6N62K3 - STMicroelectronics
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
Technical Details
| Case/Package | TO-262-3 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 1.2Ω |
| Drain to Source Voltage (Vdss) | 620V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 875pF |
| Introduction Date | 2008-05-22 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 30W |
| Min Breakdown Voltage | 620V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 1.2Ω |
| REACH SVHC | Yes |
| Rise Time | 12ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 22ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | NRND | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| Infineon | Obsolete |
Non-Authorized Distributors
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