STP13NK60ZFP - STMicroelectronics

N-Channel 600 V, 0.48 Ohm, 13 A TO-220FP Zener-Protected SuperMesh(TM) POWER MOSFET

Technical Details

Case/Package TO-220-3
China RoHS Non-Compliant
Continuous Drain Current (ID) 13A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 550mΩ
Drain to Source Voltage (Vdss) 600V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 12ns
Gate to Source Voltage (Vgs) 30V
Height 16.4mm
Input Capacitance 2.03nF
Introduction Date 1980-01-04
Length 10.4mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 40W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 35W
Radiation Hardening No
Rds On Max 550mΩ
REACH SVHC No
Rise Time 14ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Threshold Voltage 3.75V
Turn-Off Delay Time 61ns
Turn-On Delay Time 22ns
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STP13NK60ZFP | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

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