Discrete Semiconductors > Transistors > MOSFETs

STW12NK90Z - STMicroelectronics

N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET

Technical Details

Case/Package	TO-247
China RoHS	Non-Compliant
Contact Plating	Tin
Continuous Drain Current (ID)	11A
Country of Origin	Mainland China
Current Rating	11A
Drain to Source Breakdown Voltage	900V
Drain to Source Resistance	880mΩ
Drain to Source Voltage (Vdss)	900V
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Fall Time	55ns
Gate to Source Voltage (Vgs)	30V
Height	20.15mm
Input Capacitance	3.5nF
Introduction Date	1980-01-04
Lead Free	Lead Free
Length	15.75mm
Lifecycle Status	Production
Max Operating Temperature	150°C
Max Power Dissipation	230W
Min Breakdown Voltage	900V
Min Operating Temperature	-55°C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Power Dissipation	230W
Radiation Hardening	No
Rds On Max	880mΩ
REACH SVHC	No
Resistance	880mΩ
Rise Time	20ns
RoHS	Compliant
Threshold Voltage	3.75V
Turn-Off Delay Time	88ns
Turn-On Delay Time	31ns
Voltage Rating (DC)	900V
Width	5.15mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

STMicroelectronics STW12NK90Z | Future Electronics

Future Electronics

Datasheets

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
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STMicroelectronics	STD17N05T4	Unknown
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STMicroelectronics	STD86N3LH5	Production
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