Discrete Semiconductors > Transistors > BJTs

TIP112 - STMicroelectronics

TIP112 Series NPN 100 V 2 A Complementary Power Darlington Transistor - TO-220-3

Technical Details

Case/Package	TO-220-3
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	100V
Collector Emitter Saturation Voltage	2.5V
Collector Emitter Voltage (VCEO)	100V
Country of Origin	Mainland China
Current Rating	2A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Height	19.68mm
hFE Min	500
Harmonized Tariff Schedule (HTS) Code	8541.29.00.95
Introduction Date	1980-01-05
Lead Free	Lead Free
Length	10.4mm
Lifecycle Status	Production
Max Collector Current	2A
Max Junction Temperature (Tj)	150°C
Max Operating Temperature	150°C
Max Power Dissipation	50W
Manufacturer Package Identifier	TO-220-P011
Min Operating Temperature	-65°C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Polarity	NPN
Power Dissipation	50W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Voltage Rating (DC)	100V
Weight	6.000006g
Width	4.6mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

STMicroelectronics TIP112 | Farnell

Farnell

Datasheets

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	TIP112	Obsolete
Bourns	TIP112	Obsolete
Central Semiconductor	TIP112	Obsolete
Texas Instruments	TIP112	Unknown
onsemi	TIP112G	Production
MCC	TIP112	Obsolete
STMicroelectronics	2N5657	Obsolete
Texas Instruments	TIP127	Unknown
onsemi	2N6668	Obsolete
onsemi	BD678	Obsolete

See more alternatives See less alternatives

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DE: 100

$

0.5929

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0.2872

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1.2451

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1.18

0.549

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Win Source

CN: 12000

$

0.1671

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IC Components Ltd.

HK: 16355

$

1.5991

1.3517

1.2144

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