STW18NM80 - STMicroelectronics

N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package

Technical Details

Case/Package TO-247
China RoHS Non-Compliant
Continuous Drain Current (ID) 17A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 800V
Drain to Source Resistance 295mΩ
Drain to Source Voltage (Vdss) 800V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 50ns
Gate to Source Voltage (Vgs) 30V
Height 20.15mm
Input Capacitance 2.07nF
Introduction Date 2009-04-20
Lead Free Lead Free
Length 15.75mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 190W
Min Breakdown Voltage 800V
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 190W
Radiation Hardening No
Rds On Max 295mΩ
REACH SVHC No
Rise Time 28ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Threshold Voltage 4V
Turn-Off Delay Time 96ns
Turn-On Delay Time 18ns
Width 5.15mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STW18NM80 | TME

TME

Lifecycle Status Indicator

   Production

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