STW21N65M5 - STMicroelectronics

N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247

Technical Details

Case/Package TO-247
China RoHS Non-Compliant
Continuous Drain Current (ID) 17A
Drain to Source Breakdown Voltage 650V
Drain to Source Resistance 190mΩ
Drain to Source Voltage (Vdss) 650V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 24ns
Gate to Source Voltage (Vgs) 25V
Height 20.15mm
Input Capacitance 1.95nF
Introduction Date 2009-02-27
Lead Free Lead Free
Length 15.75mm
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 125W
Min Breakdown Voltage 650V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 125W
Radiation Hardening No
Rds On Max 190mΩ
REACH SVHC No
Resistance 190mΩ
Rise Time 10ns
RoHS Compliant
Threshold Voltage 4V
Turn-Off Delay Time 12ns
Width 5.15mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete

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