Discrete Semiconductors > Transistors > MOSFETs

STW26NM60N - STMicroelectronics

N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package

Technical Details

Case/Package	TO-247
China RoHS	Non-Compliant
Contact Plating	Tin
Continuous Drain Current (ID)	20A
Country of Origin	Mainland China
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	165mΩ
Drain to Source Voltage (Vdss)	600V
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Fall Time	50ns
Gate to Source Voltage (Vgs)	25V
Height	20.15mm
Input Capacitance	1.8nF
Introduction Date	2009-04-29
Lead Free	Lead Free
Length	15.75mm
Lifecycle Status	Production
Max Operating Temperature	150°C
Max Power Dissipation	140W
Min Breakdown Voltage	600V
Min Operating Temperature	-55°C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Power Dissipation	140W
Radiation Hardening	No
Rds On Max	165mΩ
REACH SVHC	No
Resistance	165mΩ
Rise Time	25ns
RoHS	Compliant
Threshold Voltage	3V
Turn-Off Delay Time	85ns
Turn-On Delay Time	13ns
Width	5.15mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

STMicroelectronics STW26NM60N | RS

RS

Datasheets

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	SFP9620	Obsolete
STMicroelectronics	STW25NM60ND	Obsolete
Infineon	SPP07N60S5	Obsolete
STMicroelectronics	STW25NM60N	Obsolete
STMicroelectronics	STW14NM50	Obsolete
STMicroelectronics	STW14NM50FD	Obsolete
STMicroelectronics	STW18NM60N	Production
Fairchild Semiconductor	FQB7P20	Obsolete
STMicroelectronics	STW21N65M5	Obsolete
STMicroelectronics	STW15NM60N	Obsolete

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RS

DE: 600

$

6.7431

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