HERF1607G - Taiwan Semiconductor

Rectifier Diode, 1 Phase, 2 Element, 16A, 800V V(RRM), Silicon, TO-220AB

Technical Details

China RoHS Non-Compliant
Contact Plating Tin
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Common Cathode
Forward Voltage 1.7V
Harmonized Tariff Schedule (HTS) Code 8541.10.00.80
Introduction Date 2000-05-11
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Forward Surge Current (Ifsm) 125A
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Output Current 16A
Max Repetitive Reverse Voltage (Vrrm) 800V
Max Reverse Leakage Current 10µA
Max Surge Current 125A
Min Operating Temperature -65°C
Number of Elements 2
Number of Terminals 3
Peak Reverse Current 10µA
Power Dissipation 400mW
REACH SVHC No
Recovery Time 80ns
Reverse Recovery Time 80ns
Reverse Standoff Voltage 800V
Reverse Voltage 800V
RoHS Compliant

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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STMicroelectronics Obsolete
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