MBR2535CT - Taiwan Semiconductor
Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 35V V(RRM), Silicon, TO-220AB
Technical Details
| Capacitance | 700pF |
| Case/Package | TO-220AB |
| China RoHS | Non-Compliant |
| Current Rating | 30A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Common Cathode |
| Forward Voltage | 950mV |
| Harmonized Tariff Schedule (HTS) Code | 8541.10.00.80 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Forward Surge Current (Ifsm) | 200A |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Output Current | 12.5A |
| Max Repetitive Reverse Voltage (Vrrm) | 35V |
| Max Reverse Leakage Current | 200µA |
| Max Surge Current | 200A |
| Min Breakdown Voltage | 35V |
| Min Operating Temperature | -65°C |
| Number of Elements | 2 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Peak Reverse Current | 200µA |
| Power Dissipation | 400mW |
| REACH SVHC | No |
| Reverse Recovery Time | 25ns |
| Reverse Standoff Voltage | 35V |
| RoHS | Compliant |
| Voltage Rating (DC) | 30V |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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