TIP122 - onsemi

Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 3A 3V 5A 2W 100V

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 100V
Contact Plating Tin
Continuous Collector Current 5A
Country of Origin Mainland China
Current 5A
Current Rating 5A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Height 9.4mm
hFE Min 1000
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1994-01-01
Lead Free Lead Free
Length 10.67mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 100V
Max Collector Current 5A
Max Operating Temperature 150°C
Max Power Dissipation 65W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity NPN
Power Dissipation 2W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Transition Frequency 4MHz
Voltage 100V
Voltage Rating (DC) 100V
Weight 1.214012g
Width 4.83mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi TIP122 | element14 APAC

element14 APAC

Lifecycle Status Indicator

   Obsolete
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Comset Semiconductors Unknown
onsemi Production
STMicroelectronics Production
CDIL Unknown
Multicomp Production
STMicroelectronics Obsolete
onsemi Obsolete
onsemi Obsolete
Toshiba Obsolete
Comset Semiconductors Unknown

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