Discrete Semiconductors > Transistors > BJTs

TIP122 - STMicroelectronics

TIP122 Series NPN/PNP 100 V 5 A Complimentary Darlington Transistor - TO-220-3

Technical Details

Case/Package	TO-220
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	100V
Collector Emitter Saturation Voltage	4V
Collector Emitter Voltage (VCEO)	100V
Contact Plating	Tin
Country of Origin	Mainland China
Current Rating	5A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Height	19.68mm
hFE Min	1000
Harmonized Tariff Schedule (HTS) Code	8541.29.00.95
Introduction Date	1980-01-04
Lead Free	Lead Free
Length	10.4mm
Lifecycle Status	Production
Max Collector Current	5A
Max Junction Temperature (Tj)	150°C
Max Operating Temperature	150°C
Max Power Dissipation	65W
Min Operating Temperature	-65°C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Polarity	NPN
Power Dissipation	65W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Voltage Rating (DC)	100V
Weight	6.000006g
Width	4.6mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

STMicroelectronics TIP122 | Farnell

Farnell

Datasheets

Future Electronics

Future Electronics

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
Comset Semiconductors	TIP122	Unknown
onsemi	TIP122G	Production
CDIL	TIP122	Unknown
Multicomp	TIP122	Production
onsemi	TIP122	Obsolete
STMicroelectronics	BDX53F	Obsolete
onsemi	BDX53C	Obsolete
onsemi	2N6388	Obsolete
Toshiba	2SD2204	Obsolete
Comset Semiconductors	TIP121	Unknown

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