TK31A60W - Toshiba
Power Field-Effect Transistor, 30.8A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
Technical Details
| Continuous Drain Current (ID) | 30.8A |
| Drain to Source Resistance | 88mΩ |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 45W |
| Min Breakdown Voltage | 600V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Rise Time | 32ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 165ns |
| Turn-On Delay Time | 70ns |
Compliance
RoHS : Unconfirmed
Images
Augswan
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Renesas | Obsolete |
Non-Authorized Distributors
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only