2SA1939O - Toshiba
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Technical Details
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| hFE Min | 80 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 60W |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 60W |
| RoHS | Non-Compliant |
| Transition Frequency | 30MHz |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Toshiba | Obsolete | ||
| Sanken | Obsolete | ||
| Fuji | Obsolete | ||
| Toshiba | Production | ||
| Allegro MicroSystems | Production | ||
| Allegro MicroSystems | Obsolete | ||
| Panasonic | Unknown | ||
| Fairchild Semiconductor | Obsolete | ||
| Sanken | Obsolete | ||
| onsemi | Production |
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