2SB676 - Toshiba
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Technical Details
| Collector Emitter Voltage (VCEO) | 80V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 1000 |
| Introduction Date | 1983-03-01 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 4A |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| NTE Electronics | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| STMicroelectronics | Production |
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