2SC3657 - Toshiba
Power Bipolar Transistor, 4A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Technical Details
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 800V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 10 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1989-09-01 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 80W |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 80W |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
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