RN2101(F) - Toshiba
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Technical Details
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 700µm |
| hFE Min | 30 |
| Length | 1.6mm |
| Lifecycle Status | Obsolete |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| RoHS | Compliant |
| Transition Frequency | 200MHz |
| Width | 800µm |
Compliance
RoHS : Unconfirmed
Images
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