DG636EEN-T1-GE4 - Vishay
Analog Switch Dual SPDT 0.3pC Charge Injection 100pA Leakage CMOS 16-Pin mQFN
Technical Details
| -3db Bandwidth | 700MHz |
| Height | 600µm |
| Height - Seated (Max) | 600µm |
| Length | 2.6mm |
| Lifecycle Status | Production |
| Max Operating Temperature | 125°C |
| Max Supply Current | 1µA |
| Max Supply Voltage | 8V |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 3V |
| Number of Channels | 1 |
| Number of Circuits | 2 |
| Number of Terminals | 16 |
| On-State Resistance | 96Ω |
| Operating Supply Voltage | 5V |
| Packaging | Cut Tape |
| RoHS | Compliant |
| Schedule B | 8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000 |
| Temperature Grade | Automotive |
| Terminal Pitch | 400µm |
| Throw Configuration | SPDT |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 52ns |
| Width | 1.8mm |
Compliance
RoHS : Unconfirmed
Images
Newark
Authorized Distributors
Non-Authorized Distributors
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.

Registered user only