SI3440ADV-T1-GE3 - Vishay
Power MOSFET, N Channel, 150 V, 2.2 A, 0.316 ohm, TSOP, Surface Mount
Technical Details
| Continuous Drain Current (ID) | 2.2A |
| Country of Origin | Germany |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 380mΩ |
| Drain to Source Voltage (Vdss) | 150V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Introduction Date | 2017-05-23 |
| Lifecycle Status | Production |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 3.6W |
| Min Breakdown Voltage | 150V |
| Min Operating Temperature | -55°C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Power Dissipation | 3.6W |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 8ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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