Discrete Semiconductors > Transistors > MOSFETs

SI8472DB-T2-E1 - Vishay

Si8472DB Series N-Channel 20 V 44 mOhm Surface Mount Power Mosfet - MICRO FOOT

Technical Details

Case/Package	BGA
Continuous Drain Current (ID)	4.5A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	44mΩ
Drain to Source Voltage (Vdss)	20V
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Gate to Source Voltage (Vgs)	8V
Input Capacitance	630pF
Introduction Date	2011-07-28
Lead Free	Lead Free
Lifecycle Status	Production
Max Operating Temperature	150°C
Max Power Dissipation	1.8W
Min Breakdown Voltage	20V
Min Operating Temperature	-55°C
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Number of Pins	6
Number of Terminals	4
Radiation Hardening	No
Rds On Max	44mΩ
REACH SVHC	Yes
Resistance	44MΩ
RoHS	Compliant
Schedule B	8541210080, 8541210080\|8541210080\|8541210080\|8541210080\|8541210080

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : Yes

Images

Vishay SI8472DB-T2-E1 | Future Electronics

Future Electronics

Datasheets

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	FDZ7064S	Obsolete
onsemi	FDZ7064AS	Obsolete
onsemi	FDZ7064N	Obsolete
onsemi	FDZ203N	Obsolete
onsemi	FDZ209N	Obsolete
onsemi	FDZ7296	Obsolete
onsemi	FDZ298N	Obsolete
onsemi	FDZ5047N	Obsolete
onsemi	FDZ294N	Obsolete
onsemi	FDZ372NZ	Obsolete

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