Discrete Semiconductors > Transistors > MOSFETs

SI8802DB-T2-E1 - Vishay

Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT

Technical Details

Case/Package	BGA
Contact Plating	Tin
Continuous Drain Current (ID)	3.5A
Country of Origin	Mainland China
Drain to Source Breakdown Voltage	8V
Drain to Source Resistance	60mΩ
Drain to Source Voltage (Vdss)	8V
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Fall Time	7ns
Gate to Source Voltage (Vgs)	5V
Introduction Date	2011-07-28
Lead Free	Lead Free
Lifecycle Status	Production
Max Operating Temperature	150°C
Max Power Dissipation	900mW
Min Breakdown Voltage	8V
Min Operating Temperature	-55°C
Mount	Surface Mount
Nominal Vgs	350mV
Number of Channels	1
Number of Elements	1
Number of Pins	4
Number of Terminals	4
Packaging	Digi-Reel®
Power Dissipation	500mW
Radiation Hardening	No
Rds On Max	54mΩ
REACH SVHC	Yes
Resistance	54mΩ
Rise Time	15ns
RoHS	Compliant
Schedule B	8541210080, 8541210080\|8541210080\|8541210080\|8541210080\|8541210080
Turn-Off Delay Time	22ns
Turn-On Delay Time	5ns

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : Yes

Images

Vishay SI8802DB-T2-E1 | RS

RS

Datasheets

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	FDZ7064S	Obsolete
onsemi	FDZ7064AS	Obsolete
onsemi	FDZ7064N	Obsolete
onsemi	FDZ203N	Obsolete
onsemi	FDZ209N	Obsolete
onsemi	FDZ7296	Obsolete
onsemi	FDZ298N	Obsolete
onsemi	FDZ5047N	Obsolete
onsemi	FDZ294N	Obsolete
onsemi	FDZ372NZ	Obsolete

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