SI8806DB-T2-E1 - Vishay
VISHAY SI8806DB-T2-E1 MOSFET Transistor, N Channel, 3.9 A, 12 V, 0.035 ohm, 4.5 V, 400 mV
Technical Details
| Case/Package | BGA |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 35mΩ |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 213µm |
| Lead Free | Lead Free |
| Length | 840µm |
| Lifecycle Status | NRND |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 900mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Packaging | Cut Tape (CT) |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| Rds On Max | 43mΩ |
| REACH SVHC | Yes |
| Rise Time | 20ns |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Width | 840µm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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