SIHA15N65E-GE3 - Vishay

Transistor MOSFET N-CH 650V 15A 3-Pin TO-220FP

Technical Details

Continuous Drain Current (ID) 15A
Drain to Source Breakdown Voltage 650V
Drain to Source Resistance 280mΩ
Drain to Source Voltage (Vdss) 650V
Export Control Classification Number (ECCN) Code EAR99
Gate to Source Voltage (Vgs) 30V
Height 18.1mm
Introduction Date 2017-06-14
Lifecycle Status Production
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 34W
Min Breakdown Voltage 650V
Min Operating Temperature -55°C
Number of Channels 1
Number of Elements 1
Number of Terminals 3
Power Dissipation 34W
REACH SVHC Yes
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time 48ns
Turn-On Delay Time 18ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

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Vishay SIHA15N65E-GE3 | Farnell

Farnell

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