SIHF9530STRL-GE3 - Vishay
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 300mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 1997-07-10 |
| Lifecycle Status | Production |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 88W |
| Min Breakdown Voltage | 100V |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Vishay | Production | ||
| Vishay | Production | ||
| Vishay | Production | ||
| Vishay | Production | ||
| Toshiba | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Production | ||
| Vishay | Obsolete |
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