SUD50P08-25L-E3 - Vishay

Single P-Channel 80 V 0.0252 Ohms Surface Mount Power Mosfet - TO-252

Technical Details

Case/Package DPAK
China RoHS Non-Compliant
Continuous Drain Current (ID) 12.5A
Country of Origin Israel
Drain to Source Breakdown Voltage -80V
Drain to Source Resistance 25.2mΩ
Drain to Source Voltage (Vdss) -80V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 100ns
Gate to Source Voltage (Vgs) 20V
Height 2.507mm
Input Capacitance 4.7nF
Introduction Date 2005-12-02
Lead Free Lead Free
Length 6.73mm
Lifecycle Status Production
Max Junction Temperature (Tj) 175°C
Max Operating Temperature 175°C
Max Power Dissipation 136W
Min Breakdown Voltage 80V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Power Dissipation 8.3W
Radiation Hardening No
Rds On Max 25.2mΩ
REACH SVHC Yes
Resistance 25.2mΩ
Rise Time 25ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Threshold Voltage -3V
Turn-Off Delay Time 95ns
Turn-On Delay Time 45ns
Weight 1.437803g
Width 6.22mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Vishay SUD50P08-25L-E3 | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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