C3M0021120D - Wolfspeed
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Technical Details
| Case/Package | TO-247-3 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 81A |
| Current Rating | 100A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 28.8mΩ |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 25.5mm |
| Introduction Date | 2019-08-19 |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | PRODUCTION |
| Max Junction Temperature (Tj) | 175°C |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 469W |
| Min Breakdown Voltage | 1.2kV |
| Min Operating Temperature | -40°C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 469W |
| REACH SVHC | No |
| RoHS | Compliant |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 142ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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