FQI12N60

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Fairchild Semiconductor
FQI12N60
Obsolete

Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...

Continuous Drain Current (ID) 10.5A
Drain to Source Resistance 700mΩ
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 180W
Min Breakdown Voltage 600V
Number of Elements 1
Number of Terminals 3
RoHS Non-Compliant
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