FQI4N20

FQI4N20

onsemi
FQI4N20
Obsolete

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Continuous Drain Current (ID) 3.6A
Drain to Source Resistance 1.4Ω
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 45W
Min Breakdown Voltage 200V
Number of Elements 1
Number of Terminals 3
RoHS Non-Compliant
Rochester Electronics

Other Distributors

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Stock Break
US: 950
100 $0.2781
1000 $0.2308
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US: 1,014
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SG: 10
1 $0.17
10 $0.17
100 $0.17
1000 $0.17
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Stock Break
CN: 80,000
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