RN2106MFV

RN2106MFV

Toshiba
RN2106MFV
Production

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Collector Emitter Voltage (VCEO) 50V
Export Control Classification Number (ECCN) Code EAR99
hFE Min 80
Introduction Date 2005-05-12
Lifecycle Status Production
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Number of Elements 1
Number of Terminals 3
REACH SVHC Yes
Resistance 47kΩ
RoHS Compliant
Transition Frequency 250MHz

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