Image |
Part Summary |
Avg Price |
Lifecycle Status |
Mount |
Case/Package |
Number of Pins |
Weight |
Contact Plating |
Min Operating Temperature |
Max Operating Temperature |
Max Power Dissipation |
Package Quantity |
Collector Emitter Voltage (VCEO) |
Packaging |
Max Collector Current |
Transition Frequency |
Series |
Polarity |
Emitter Base Voltage (VEBO) |
Collector Emitter Breakdown Voltage |
Collector Base Voltage (VCBO) |
Power Dissipation |
hFE Min |
Frequency |
Max Breakdown Voltage |
Number of Elements |
Collector Emitter Saturation Voltage |
Max Frequency |
Collector-emitter Voltage-Max |
Voltage Rating (DC) |
Current Rating |
Gain Bandwidth Product |
Continuous Collector Current |
Gain |
Termination |
Voltage Rating |
Operating Frequency |
Noise Figure |
Power Gain |
Element Configuration |
Diameter |
Length |
Height |
Width |
RoHS |
Ratings |
Radiation Hardening |
RoHS Compliant |
Lead Free |
Reach SVHC Compliant |
Halogen Free |
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BC817-40LT1GON SEMICONDUCTOR - BC817-40LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 250 hFE - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 250 hFE |
USD
0.013
|
Volume Production
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SOT-23-3 | 3 | Tin, Matte | -55°C | 150°C | 300mW | 1 | 45V | Tape and Reel | 500mA | 100MHz | - | NPN | 5V | 45V | 50V | 300mW | 250 | 100MHz | 45V | 1 | 700mV | 100MHz | 700mV | 100MHz | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | Halogen Free | |||||||||||||||
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BC847BWH6327XTSA1Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-323 T/R |
USD
0.01
|
Not Recommended for New Design
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Surface Mount | SOT-323-3 | 3 | -65°C | 150°C | 250mW | 3000 | 600mV | Tape and Reel | 100mA | 250MHz | - | NPN | 6V | 45V | 50V | 250mW | 200 | 250MHz | 1 | 600mV | 250MHz | 600mV | 100mA | SMD/SMT | Single | 2mm | 0.8mm | 1.25mm | Yes | No | Yes | Lead Free | No | Halogen Free | ||||||||||||||
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BFP193WH6327XTSA1RF TRANSISTOR, NPN, SOT-343; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:12V; Continuous Collector Current Ic:80mA; ft, Typ:8GHz; Case Style:SOT-343; Power Dissipation Pd:580mW; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Associated Gain Ga:20.5dB; Noise:1dB; Test Frequency:900MHz; Transistors, No. of:1; ft, Min:6000MHz; Current Ic @ Gms:30mA; Current Ic Continuous a Max:0.05A; Current Ic Fc Measurement:10mA; Current Ic Max:0.05A; Current Ic av:80mA; Current Ic hFE:30mA; Gms:13dB; Min Hfe:50; Noise Level, Fc @ Ic:2.1dB; Power, Ptot:580mW; SMD Marking:RCs; Voltage, Vcbo:20V |
USD
0.01
|
Volume Production
|
Surface Mount | SOT | Tin, Matte | -55°C | 150°C | 580mW | 1 | 12V | Tape and Reel | 80mA | 8GHz | - | NPN | 2V | 12V | 20V | 580mW | 8GHz | 12V | 1 | 8GHz | 20.5dB | 2mm | 0.8mm | 1.25mm | Yes | Yes | Lead Free | Halogen Free | ||||||||||||||||||||
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MMBTA56LT1GON SEMICONDUCTOR - MMBTA56LT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 50 hFE |
USD
0.013
|
Volume Production
|
SOT-23-3 | 3 | -55°C | 150°C | 225mW | 3000 | 80V | Tape and Reel | 500mA | 50MHz | - | PNP | 4V | -80V | 80V | 300mW | 100 | 50MHz | 80V | 1 | -250mV | 50MHz | 250mV | -80V | -500mA | 50MHz | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | |||||||||||||||
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BCV61CE6327HTSA1Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR |
USD
0.216
|
Not Recommended for New Design
|
Surface Mount | TO-253-4 | 4 | Tin, Matte | -65°C | 150°C | 300mW | 1 | 30V | Tape and Reel | 100mA | 250MHz | - | NPN | 6V | 30V | 300mW | 110 | 250MHz | 600mV | 250MHz | 30V | 100mA | 100mA | SMD/SMT | 30V | 2.9mm | 1mm | 1.3mm | Yes | No | Yes | Lead Free | Not Halogen Free | |||||||||||||||
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BCR191E6327HTSA1Infineon, BCR191E6327 PNP Digital Transistor, 100 mA 50 V 22 k, Ratio Of 1, 3-Pin SOT-23 |
USD
0.01
|
End of Life
|
Surface Mount | TO-236-3 | 3 | -65°C | 150°C | 200mW | 1 | 50V | Tape and Reel | 100mA | 200MHz | - | PNP | 10V | 50V | 200mW | 50V | 300mV | 300mV | -50V | 2.9mm | 0.9mm | 1.3mm | Yes | No | Yes | Lead Free | Not Halogen Free | |||||||||||||||||||||
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BFP540H6327XTSA1RF TRANSISTOR, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:1.8GHz; Power Dissipation Pd:250mW; DC Collector Current:80mA; DC Current Gain hFE:110hFE; RF Transistor Case:SOT-343; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Min:1.8GHz; Gain Bandwidth ft Typ:1.8GHz; Hfe Min:50; No. of Transistors:1; Noise Figure Typ:0.9dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Output @ Third Order Intercept Point IP3:24.5dB; Power @ 1dB Gain Compression, P1dB:11dB; Power Dissipation Ptot Max:250mW; SMD Marking:ATs; Termination Type:Surface Mount Device; Test Frequency:1.8GHz; Transistor Case Style:SOT-343; Voltage Vcbo:14V |
USD
0.01
|
Volume Production
|
Surface Mount | SOT-343 | 4 | -65°C | 150°C | 250mW | 1 | 4.5V | Tape and Reel | 80mA | 30GHz | - | NPN | 1V | 5V | 14V | 250mW | 50 | 30GHz | 5V | 1 | 4.5V | 80mA | 16dB | 30000 MHz | 2mm | 0.9mm | 1.25mm | Yes | Yes | Yes | ||||||||||||||||||
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MMBT4403LT1GTransistor: PNP; bipolar; -40V; -0.6A; 225mW; -55+150 deg.C; SMD; SOT23 |
USD
0.007
|
Volume Production
|
SOT-23-3 | 3 | -55°C | 150°C | 300mW | 3000 | 40V | Tape and Reel | 600mA | 200MHz | - | PNP | 5V | 40V | 40V | 300mW | 30 | 200MHz | 40V | 1 | -750mV | 200MHz | 750mV | -40V | -600mA | 200MHz | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | |||||||||||||||
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BFP183E7764HTSA1Infineon BFP183E7764 NPN RF Bipolar Transistor, 0.065 A, 12 V, 4-Pin SOT-143 |
USD
0.083
|
Volume Production
|
Surface Mount | TO-253-4 | 4 | -65°C | 150°C | 250mW | 3000 | 12V | Cut Tape | 65mA | 8GHz | - | 12V | 20V | 70 | 12V | 12V | 65mA | 22dB | 0.9dB | 22dB | 1.1mm | Yes | Yes | Lead Free | Not Halogen Free | |||||||||||||||||||||||
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BCP56-16T1GON SEMICONDUCTOR - BCP56-16T1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 100 RoHS Compliant: Yes |
USD
0.08
|
Volume Production
|
SOT-223-4 | 4 | Tin, Matte | -65°C | 150°C | 1.5W | 1000 | 80V | Tape and Reel | 1A | 130MHz | - | NPN | 5V | 80V | 100V | 1.5W | 25 | 130MHz | 80V | 1 | 500mV | 130MHz | 500mV | 80V | 1A | 130MHz | 6.5mm | 1.57mm | 3.5mm | Yes | No | Yes | Lead Free | No | ||||||||||||||
Results 81 - 90 of 19500
