Image |
Part Summary |
Avg Price |
Lifecycle Status |
Mount |
Case/Package |
Number of Pins |
Weight |
Contact Plating |
Min Operating Temperature |
Max Operating Temperature |
Packaging |
Package Quantity |
Polarity |
Max Collector Current |
Collector Emitter Breakdown Voltage |
Max Breakdown Voltage |
Series |
Max Power Dissipation |
Collector Emitter Voltage (VCEO) |
Emitter Base Voltage (VEBO) |
Collector Base Voltage (VCBO) |
Number of Elements |
Collector-emitter Voltage-Max |
Power Dissipation |
Transition Frequency |
Frequency |
hFE Min |
Collector Emitter Saturation Voltage |
Voltage Rating (DC) |
Current Rating |
Max Frequency |
Gain Bandwidth Product |
Continuous Collector Current |
Gain |
Operating Frequency |
Noise Figure |
Power Gain |
Output Current |
Output Voltage |
Hold Current |
Max Repetitive Reverse Voltage (Vrrm) |
Power Rating |
Element Configuration |
Type |
Diameter |
Length |
Height |
Width |
RoHS |
Ratings |
Radiation Hardening |
RoHS Compliant |
Lead Free |
Reach SVHC Compliant |
Halogen Free |
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BCP69T1GON SEMICONDUCTOR - BCP69T1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, -20 V, 60 MHz, 1.5 W, -1 A, 375 hFE |
USD
0.044
|
Volume Production
|
SOT-223-4 | 4 | -65°C | 150°C | Tape and Reel | 1000 | PNP | 1A | -20V | 20V | - | 1.5W | 20V | 5V | 25V | 1 | 500mV | 1.5W | 60MHz | 60MHz | 50 | -500mV | -20V | -1A | 60MHz | 60MHz | 6.5mm | 1.57mm | 3.5mm | Yes | No | Yes | Lead Free | No | |||||||||||||||||||
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BCX70KE6327HTSA1Transistor, Bipol, Npn, 45V, Sot-23-3; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:45V; Transition Frequency Ft:250Mhz; Power Dissipation Pd:330Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:100Hfe; Transistor Rohs Compliant: Yes |
USD
0.01
|
Not Recommended for New Design
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Surface Mount | SOT-23-3 | 3 | Tin, Matte | -65°C | 150°C | Tape and Reel | 3000 | NPN | 100mA | 45V | 45V | - | 330mW | 550mV | 6V | 45V | 1 | 550mV | 330mW | 250MHz | 250MHz | 550mV | 45V | 100mA | 100mA | Yes | No | Yes | Lead Free | No | Not Halogen Free | |||||||||||||||||||||
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BCV62CE6327HTSA1Transistor: PNP x2; bipolar; 30V; 100mA; 300mW; SOT143 |
USD
0.01
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Not Recommended for New Design
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Surface Mount | SOT-143 | Tin, Matte | -65°C | 150°C | Tape and Reel | 3000 | PNP | 100mA | 30V | 30V | - | 300mW | 5V | 6V | 30V | 2 | 650mV | 300mW | 250MHz | 250MHz | 100 | 650mV | -30V | -100mA | 250MHz | 250MHz | 100mA | Dual | 2.9mm | 0.9mm | 1.3mm | Yes | Yes | Lead Free | No | Not Halogen Free | ||||||||||||||||
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BFP620H7764XTSA1RF TRANSISTOR, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.3V; Transition Frequency ft:65GHz; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:180hFE; RF Transistor Case:SOT-343; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Typ:65GHz; Hfe Min:110; No. of Transistors:1; Noise Figure Typ:0.7dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Output @ Third Order Intercept Point IP3:25dB; Power @ 1dB Gain Compression, P1dB:15dBm; Power Dissipation Ptot Max:185mW; SMD Marking:R2s; Termination Type:Surface Mount Device; Test Frequency:1.8GHz; Transistor Case Style:SOT-343; Voltage Vcbo:7.5V |
USD
0.2479
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Volume Production
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Surface Mount | SOT | Tin, Matte | -65°C | 150°C | Tape and Reel | 3000 | NPN | 80mA | 2.8V | 2.8V | - | 185mW | 2.3V | 1.2V | 7.5V | 1 | 2.3V | 185mW | 65GHz | 65GHz | 110 | 80mA | 21.5dB | 65 GHz | 0.7dB | 21.5dB | 100mA | 15V | 1W | Yes | Yes | Lead Free | Halogen Free | |||||||||||||||||||
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BFP193E6327HTSA1RF TRANSISTOR, NPN, 12V, 8GHZ, SOT-143; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70; RF Transistor Case:SOT-143; No. of Pins:4; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited |
USD
0.0979
|
Volume Production
|
Surface Mount | TO-253-4 | 4 | -65°C | 150°C | Tape and Reel | 1 | NPN | 80mA | 12V | 12V | - | 580mW | 12V | 2V | 20V | 1 | 580mW | 8GHz | 8GHz | 18dB | Yes | Yes | ||||||||||||||||||||||||||||||
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ULN2003D1013TRARRAY, DARLINGTON, SMD; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000; Transistor Case Style:SOIC; No. of Pins:16; Operating Temperature ;RoHS Compliant: Yes |
USD
0.1027
|
Volume Production
|
Surface Mount | SO | 16 | 0.2g | -40°C | 85°C | Tape and Reel | 1 | NPN | 500mA | 50V | 50V | - | 50V | 7 | 1.6V | 1.1V | 50V | 500mA | 500mA | 50V | 10mm | 1.65mm | 4mm | Yes | No | Yes | Lead Free | No | ||||||||||||||||||||||||
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MMBT4401LT1GON SEMICONDUCTOR - MMBT4401LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 RoHS Compliant: Yes |
USD
0.0111
|
Volume Production
|
SOT-23-3 | 3 | -55°C | 150°C | Tape and Reel | 3000 | NPN | 600mA | 40V | 40V | - | 300mW | 40V | 6V | 60V | 1 | 750mV | 300mW | 250MHz | 250MHz | 20 | 750mV | 40V | 600mA | 250MHz | 250MHz | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | |||||||||||||||||||
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BC846BLT1GON SEMICONDUCTOR - BC846BLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 200 RoHS Compliant: Yes |
USD
0.0068
|
Volume Production
|
SOT-23-3 | 3 | Tin, Matte | -55°C | 150°C | Tape and Reel | 1 | NPN | 100mA | 65V | 65V | - | 300mW | 65V | 6V | 80V | 1 | 600mV | 300mW | 100MHz | 100MHz | 200 | 600mV | 65V | 100mA | 100MHz | 100MHz | General Purpose | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | Halogen Free | ||||||||||||||||
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MMBT5551LT1GON SEMICONDUCTOR MMBT5551LT1G Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 225 mW, 600 mA, 80 hFE |
USD
0.012
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Volume Production
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SOT-23-3 | 3 | -55°C | 150°C | Tape and Reel | 3000 | NPN | 600mA | 160V | 160V | - | 225mW | 160V | 6V | 180V | 1 | 200mV | 300mW | 80 | 150mV | 160V | 600mA | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | |||||||||||||||||||||||
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BFP540ESDH6327XTSA1NPN Silicon RF Transistor for ESD protected high gain low noise amplifier, SOT343, RoHS |
USD
0.01
|
Volume Production
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Surface Mount | SOT-343 | 4 | Tin | -65°C | 150°C | Tape and Reel | 1 | NPN | 80mA | 5V | 5V | - | 250mW | 1V | 10V | 4.5V | 30GHz | 50 | 30GHz | 30GHz | 80mA | 21.5dB | 30 GHz | 0.9dB | 21.5dB | 2mm | 0.8mm | 1.25mm | Yes | Yes | Lead Free | Halogen Free | ||||||||||||||||||||
Results 51 - 60 of 19500
