Uncategorized
2N2609 - InterFET
Small Signal Field-Effect Transistor, P-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Case/Package | TO-18-3 |
| Continuous Drain Current (ID) | 5mA |
| Drain to Source Voltage (Vdss) | -10V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | -30V |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 300mW |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Solitron Devices | Production | ||
| Central Semiconductor | Obsolete | ||
| Motorola | Obsolete | ||
| Toshiba | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Vishay | Obsolete | ||
| Vishay | Obsolete | ||
| InterFET | Unknown | ||
| Central Semiconductor | Production |
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