2N2609 - Central Semiconductor
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Case/Package | TO-18 |
| Continuous Drain Current (ID) | 10mA |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 30V |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| InterFET | Unknown | ||
| Solitron Devices | Production | ||
| Motorola | Obsolete | ||
| Toshiba | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Vishay | Obsolete | ||
| Vishay | Obsolete | ||
| InterFET | Unknown | ||
| Central Semiconductor | Production |
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