Uncategorized
JAN2N2609 - Solitron Devices
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Case/Package | TO-18 |
| Country of Origin | USA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Gate to Source Voltage (Vgs) | 30V |
| Introduction Date | 1993-02-05 |
| Lifecycle Status | Production |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
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