Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Technical Details

Case/Package TO-262-3
Continuous Drain Current (ID) 30A
Drain to Source Voltage (Vdss) 100V
Input Capacitance 3.22nF
Lifecycle Status Production
Max Operating Temperature 175°C
Max Power Dissipation 33W
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Rds On Max 15.8mΩ
REACH SVHC Yes
RoHS Compliant

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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Fuji Unknown
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