Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin

Technical Details

Body Material Metal
Case/Package TO-66
Collector Base Voltage (VCBO) 90V
Collector Emitter Saturation Voltage 6V
Collector Emitter Voltage (VCEO) 55V
Current 4A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 7V
Gain Bandwidth Product 3MHz
hFE Min 25
Introduction Date 1975-07-01
Lead Free Lead Free
Lifecycle Status Obsolete
Max Collector Current 4A
Max Operating Temperature 200°C
Max Power Dissipation 25W
Min Operating Temperature -65°C
Number of Elements 1
Number of Terminals 2
Polarity NPN
RoHS Non-Compliant
Transition Frequency 800kHz
Voltage 90V

Compliance

   RoHS : Unconfirmed

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Central Semiconductor Obsolete
Fairchild Semiconductor Obsolete
Semelab Unknown
Motorola Obsolete
Motorola Obsolete
Central Semiconductor Obsolete
Central Semiconductor Obsolete
Microchip Production
Microchip Production
Central Semiconductor Obsolete

See more alternatives See less alternatives

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DE: 2499
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