2N6308 - Central Semiconductor
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Technical Details
| Body Material | Metal |
| Collector Emitter Saturation Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 350V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Fall Time | 400ns |
| hFE Min | 12 |
| Introduction Date | 1982-11-30 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 8A |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 125W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Rise Time | 600ns |
| RoHS | Non-Compliant |
| Transition Frequency | 5MHz |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Microchip | Production | ||
| Solitron Devices | Production | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Unitrode | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| onsemi | Production | ||
| STMicroelectronics | Obsolete | ||
| Motorola | Obsolete |
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only