FQI7N60 - Fairchild Semiconductor
Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Resistance | 1Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1999-12-08 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 3.13W |
| Min Breakdown Voltage | 600V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | EOL | ||
| onsemi | Obsolete | ||
| Infineon | Obsolete | ||
| STMicroelectronics | Production | ||
| Fairchild Semiconductor | Obsolete | ||
| Infineon | Obsolete | ||
| NEC | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| onsemi | Obsolete | ||
| Fairchild Semiconductor | Obsolete |
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only