2SK2029-01L - Fuji Electric
Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 4Ω |
| Lifecycle Status | Obsolete |
| Max Power Dissipation | 60W |
| Min Breakdown Voltage | 900V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Toshiba | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Fuji Electric | Obsolete | ||
| Renesas | Obsolete | ||
| Fuji Electric | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Fuji | Unknown | ||
| Sanyo | Obsolete | ||
| International Rectifier | Obsolete |
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