2N3440 - Microchip

TRANS NPN 250V 1A TO39 Bipolar (BJT) Transistor NPN 250 V 1 A 800 mW Through Hole TO-39 (TO-205AD)

Technical Details

Projected EOL Date 2049-02-05
Case/Package TO-39
Collector Base Voltage (VCBO) 300V
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage 500mV
Collector Emitter Voltage (VCEO) 250V
Country of Assembly Philippines
Country of Fabrication United States of America
Country of Origin PHL
Export Control Classification Number (ECCN) Code EAR99
Emitter Base Voltage (VEBO) 7V
Height 6.6mm
hFE Min 40
Harmonized Tariff Schedule (HTS) Code 8541.21.0095
Lifecycle Status Production
Manufacturer Lifecycle Status REL
Max Collector Current 1A
Max Junction Temperature (Tj) 200°C
Max Operating Temperature 200°C
Max Power Dissipation 800mW
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Polarity NPN
Power Dissipation 800mW
Radiation Hardening No
RoHS Non-Compliant
Schedule B 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No

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Lifecycle Status Indicator

   Production
Symbol
Footprint

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