BDP31 - NXP Semiconductors
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Technical Details
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 20 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.75 |
| Introduction Date | 1994-09-29 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.35W |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Power Dissipation | 1.5W |
| RoHS | Non-Compliant |
| Transition Frequency | 60MHz |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | Production | ||
| STMicroelectronics | Production | ||
| onsemi | Obsolete | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Unknown | ||
| Central Semiconductor | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| Bourns | Obsolete | ||
| Bourns | Obsolete | ||
| Bourns | Obsolete |
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