ATP405-TL-H - onsemi

Power MOSFET, N-Channel, 100V, 40A, 33mΩ

Technical Details

China RoHS Non-Compliant
Contact Plating Tin Bismuth
Continuous Drain Current (ID) 40A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 100V
Drain to Source Resistance 33mΩ
Drain to Source Voltage (Vdss) 100V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 150ns
Gate to Source Voltage (Vgs) 20V
Halogen Free Halogen Free
Input Capacitance 4nF
Introduction Date 2012-06-25
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Operating Temperature 150°C
Max Power Dissipation 70W
Min Breakdown Voltage 100V
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Power Dissipation 70W
Rds On Max 33mΩ
REACH SVHC No
Resistance 33mΩ
Rise Time 125ns
RoHS Compliant
Turn-Off Delay Time 220ns
Turn-On Delay Time 38ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

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