BD237STU - onsemi

2.0 A, 100 V, 25W NPN Epitaxial Silicon Bipolar Power Transistor

Technical Details

Case/Package TO-126
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 600mV
Collector Emitter Voltage (VCEO) 80V
Contact Plating Tin
Country of Origin Mainland China
Current Rating 2A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 3MHz
Gain Bandwidth Product 3MHz
Height 11mm
hFE Min 25
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1999-01-01
Lead Free Lead Free
Length 8mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 400V
Max Collector Current 2A
Max Operating Temperature 150°C
Max Power Dissipation 25W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 25W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Transition Frequency 3MHz
Voltage Rating (DC) 80V
Weight 761mg
Width 3.25mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi Obsolete
onsemi Production
MCC Obsolete

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